Luminescent device and process of manufacturing the same

ABSTRACT

In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT.  
     As the insulating films  117, 317  and  417  provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion, for example, a silicon nitride film containing a large amount of fluorine, a silicon oxynitride film containing a large amount of fluorine or an organic resin film containing a particle consisted of an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound is used.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to an electric appliance using aluminescent device which is formed by making a semiconductor element(element using a semiconductor thin film) on a substrate using aluminescent element having a film containing an organic compound withwhich luminescence or phosphorescence is obtained by impressing anelectric field, representatively, EL (electroluminescence) displaydevice and its EL display device as a display section.

[0003] It should be noted that in the present invention, a luminescentelement is referred to an element in which an organic compound layer isprovided between a pair of electrodes, a luminescent device is referredto an image display device or a luminescent device using a luminescentelement. Moreover, it is defined herein that the category of luminescentdevices includes all of a module in which a connector, for example, aFlexible Printed Circuit (FPC), a Tape Automated Bonding (TAB) or a TapeCarrier Package (TCP) is attached to a luminescent element, a module inwhich a print-wiring board is provided on the tip of the TAB or TCP, ora module in which an IC (integrated circuit) is directly mounted on aluminescent element by a Chip On Glass (COG) method.

[0004] 2. Related Art

[0005] In recent years, the technology for forming a TFT on a substratehas been largely advanced, and the development applied to an activematrix type display device has been proceeded. Particularly, sinceelectric field effect mobility of a TFT using a polysilicon film ishigher than that of the conventional TFT using an amorphous silicon film(which is also referred to as “mobility”), an operation at a high speedis capable of being carried out.

[0006] Such an active matrix type display device now attracts a greatdeal of attention since it obtains a variety of advantages such as thereduction of the manufacturing costs, the miniaturization of a displaydevice, the raising of yield, the reduction {increase?} of throughputand the like by utilizing a method in which a variety of circuits andelements are made up on the same substrate. A luminescent element usingan organic compound having the characteristics such as being thin type,light weighted, having a high speed responsibility, direct current lowvoltage drive and the like as an emitter is expected to be applied tothe next generation flat panel display. Particularly, a display devicein which luminescent elements (which is also referred to as EL element)are arranged in a matrix shape (hereinafter, referred to as “activematrix type EL display device”) is considered to be advantageous whencomparing to the conventional liquid crystal display devices from theviewpoint that it has a wide angular field of view and is excellent invisibility.

[0007] An active matrix type EL display device provides a switchingelement consisted of a TFT (hereinafter, referred to simply as switchingelement) at each pixel, makes a drive element for performing a currentcontrol by its TFT for switching (hereinafter, referred to as TFT forcurrent control) operate and makes an EL layer (strictly referring toit, it is an emitting layer) emit. For example, an EL display devicedescribed in Japanese Unexamined Patent Publication No. H10-189252gazette is known.

[0008] As for an active matrix type EL display device, two kinds ofstructures are considered from the viewpoint of emission direction ofthe light. One is a structure in which the light emitted from the ELelement transmits through the opposed substrate and is irradiated intothe observer's eyes. In this case, the observer can recognize the imagefrom the opposed substrate side. Another one is a structure in which thelight emitted from the EL element transmits through an element substrateand is irradiated into the observer's eyes. In this case, the observercan recognize the image from the element substrate side.

[0009] In the case where an active matrix type EL display device wasintended to prepare, after a thin film transistor (hereinafter, referredto as TFT) was formed on the insulating surface, an interlayerinsulating film is formed on the TFT, an anode of a luminescent elementelectrically connected to the TFT via the interlayer insulating film isformed, and further on the anode, an organic compound layer is formed,and further, after the organic compound layer was formed, a cathode isformed whereby a luminescent element is formed.

[0010] As a material used for a cathode, it is said that it ispreferable to use a metal having a small work function(representatively, metal elements belonging to I group or II group ofthe periodic table) or an alloy containing these. Since the smaller thework function is, the more the luminous efficiency is enhanced, it ispreferable that among these, as a material used for a cathode, an alloycontaining Li (lithium), which is one of alkaline metals, is used.

[0011] However, in the case where a material containing an alkalinemetal is used for a cathode, while it can contributes to the enhancementof the luminous efficiency of the luminescent element, there is a fearof the alkaline metal ion used for the cathode being diffused to bemixed into an active layer of the TFT.

[0012] In a TFT, when the voltage is applied to a gate electrode,depending on its polarity, an impurity ion of an alkaline metal or thelike is attracted to an active layer side. Then, in the case where theseimpurity ions cannot be blocked by an insulating film for covering theactive layer, these are mixed into the interface between the insulatingfilm and the active layer and into the active layer, causes the increaseof interface level and becomes trapping center of a carrier, it isconsidered to cause the variation of electric characteristics of the TFTand the lowering of the reliability for the TFT.

[0013] At present, as an insulating film for covering an active layer ofTFT, an inorganic insulating film represented by a silicon oxide film, asilicon nitride film, a silicon oxynitride film and the like and anorganic resin film represented by a polyimide film, an acrylic film andthe like are used. The experiment for confirming the blocking effects ofthese insulating films were carried out.

[0014] As a result of examining the characteristic variation of the MOSby preparing a MOS on a substrate having an insulating surface andforming an Al—Li alloy via an insulating film (silicon nitride film,silicon oxynitride film) located above the MOS, the characteristicvariation was large, and it is considered that the cause of it is mainlyattributed to the fact that Li has been mixed into the active layer.

[0015] Therefore, it is considered that the variation of TFTcharacteristics and the lowering of the reliability are also occurred inthe case where an EL element having a cathode containing an alkalinemetal on TFT was formed.

[0016] From the results described above, an insulating film providedbetween a TFT and an EL element was not sufficient for preventing animpurity ion (representatively, alkaline metal ion) from diffusing fromthe EL element into the TFT.

[0017] Moreover, also in the case where a material containing analkaline metal in an organic compound layer was used, it is consideredthat the diffusion of an impurity ion (representatively, alkaline metalion) from the EL element into the TFT is generated.

[0018] Moreover, although there are some cases where what is called abuffer layer is formed between a cathode and an anode, but also in thecase where a material containing an alkaline metal in this buffer layerwas used, it is considered that the diffusion of the impurity ion(representatively, alkaline metal ion) from the EL element to the TFT isgenerated.

[0019] Moreover, also in the case where a material containing analkaline-earth metal (which is also referred to as alkaline earth) in acathode, an anode, a buffer layer, or an organic compound layer wasused, similarly, there is a fear of the diffusion of an impurity ion(representatively, alkaline-earth metal ion) from the EL element to theTFT being generated and causing the variation of characteristics of theTFT.

BRIEF SUMMARY OF THE INVENTION

[0020] As for the present invention, the present inventors have directedtheir attention to the above-described problems, and clarified that asan insulating film provided between a TFT and an EL element, it ispreferable that a material for not only blocking the diffusion of animpurity ion such as an alkaline metal ion, an alkaline-earth metal ionor the like, but also absorbing an impurity ion such as an alkalinemetal ion, an alkaline-earth metal ion or the like is used, and furthera material endurable to the temperature for the processing, which isperformed later, is suitable for its use.

[0021] As a material for matching these conditions, a silicon nitridefilm containing a large amount of fluorine is listed as an example. Thefluorine concentration contained in the film of the silicon nitride filmmay be 1×10¹⁹/cm³ or more, preferably, the composition ratio of thefluorine in the silicon nitride film may be set in the range from 1 to5%. Fluorine in the silicon nitride film is bonded to an alkaline metalion, an alkaline-earth metal ion or the like, and absorbed in the film.Moreover, a silicon oxynitride film containing a large amount offluorine is listed as another example. Moreover, an organic resin filmcontaining a particle consisted of an antimony (Sb) compound, a tin (Sn)compound, or an indium (In) compound for absorbing an alkaline metalion, an alkaline-earth metal ion or the like, for example, an organicresin film containing antimony pentaoxide particle (Sb₂O₅.nH₂O) is alsolisted as the other example. It should be noted that this organic resinfilm contains a particle having an average diameter of 10-20 nm, and itsoptical transparency is also very high. An antimony compound representedby this antimony pentaoxide particle tends to easily absorb an impurityion such as an alkaline metal ion or the like, and an alkaline-earthmetal ion.

[0022] It should be noted that needless to say, it might be aconfiguration in which an insulating film consisted of a material forabsorbing the above-described impurity ion is provided on one portion orthe whole surface.

[0023] Moreover, in the case where a silicon nitride film containingfluorine at the composition ratio in the range from 1 to 5% is used asan insulating film for absorbing an impurity ion such as an alkalinemetal ion, an alkaline-earth metal ion or the like, it is capable ofbeing made so that degas from the organic resin film does not exert abad influence on a luminescent element.

[0024] Moreover, as for the present invention, preferably it isconfigured so that an anode containing an alkaline metal ion and analkaline-earth metal ion or an organic compound layer containing analkaline metal {ion} and an alkaline-earth metal ion is arranged apartfrom an active layer of a TFT as distantly as possible.

[0025] As for a configuration of the present invention disclosed in thepresent specification, in a semiconductor device having a TFT providedon an insulating surface of a substrate and a luminescent element forelectrically connecting to the TFT,

[0026] a luminescent device is characterized in that the saidluminescent element is equipped with an organic compound layer, an anodeand a cathode containing an alkaline metal, and the said luminescentdevice has an insulating layer for absorbing the said alkaline metal oran insulating layer for preventing the said alkaline metal fromdiffusing between the said TFT and the said luminescent element.

[0027] Moreover, as the other configuration of the present invention,

[0028] in a semiconductor having a TFT provided on an insulating surfaceof a substrate and a luminescent element for electrically connecting tothe TFT,

[0029] a luminescent device is characterized in that the saidluminescent element is equipped with an organic compound layercontaining an alkaline metal, an anode, and a cathode, and the saidluminescent device has an insulating layer for absorbing the saidalkaline metal or an insulating layer for preventing the said alkalinemetal from diffusing between the said TFT and the said luminescentelement.

[0030] Moreover, as the other configuration of the present invention,

[0031] in a semiconductor having a TFT provided on an insulating surfaceof a substrate and a luminescent element for electrically connecting tothe TFT,

[0032] a luminescent device is characterized in that the saidluminescent element is equipped with an organic compound layer, ananode, a buffer layer containing an alkaline metal, and a cathode, andthe said luminescent device has an insulating layer for absorbing thesaid alkaline metal or an insulating layer for preventing the saidalkaline metal from diffusing between the said TFT and the saidluminescent element.

[0033] Moreover, an insulating film for absorbing an alkaline-earthmetal ion may be used, as the other configuration of the presentinvention,

[0034] in a semiconductor having a TFT provided on an insulating surfaceof a substrate and a luminescent element for electrically connecting tothe TFT,

[0035] a luminescent device is characterized in that the saidluminescent element is equipped with an organic compound layer, ananode, and a cathode containing an alkaline-earth metal, and the saidluminescent device has an insulating layer for absorbing the saidalkaline-earth metal or an insulating layer for preventing the saidalkaline-earth metal from diffusing between the said TFT and the saidluminescent element.

[0036] Moreover, as the other configuration of the present invention,

[0037] in a semiconductor having a TFT provided on an insulating surfaceof a substrate and a luminescent element for electrically connecting tothe TFT,

[0038] a luminescent device is characterized in that the saidluminescent element is equipped with an organic compound layercontaining an alkaline-earth metal, an anode, and a cathode, and thesaid luminescent device has an insulating layer for absorbing the saidalkaline-earth metal or an insulating layer for preventing the saidalkaline-earth metal from diffusing between the said TFT and the saidluminescent element.

[0039] Moreover, as the other configuration of the present invention,

[0040] in a semiconductor having a TFT provided on an insulating surfaceof a substrate and a luminescent element for electrically connecting tothe TFT,

[0041] a luminescent device is characterized in that the saidluminescent element is equipped with an organic compound layer, ananode, a buffer layer containing an alkaline-earth metal, and a cathode,and the said luminescent device has an insulating layer for absorbingthe said alkaline-earth metal or an insulating layer for preventing thesaid alkaline-earth metal from diffusing between the said TFT and thesaid luminescent element.

[0042] Conventionally, an insulating film provided between a TFT and anEL element had a performance only for blocking an impurity ion ofcomparatively low level, however, by making it a configuration of theabove-described present invention, the diffusion of an impurity ion(representatively, alkaline metal ion and alkaline-earth metal ion) fromthe EL element can be sufficiently prevented.

[0043] In the present invention, alkaline metals are referred to sixelements of lithium (Li), sodium (Na), potassium (K), rubidium (Rb),cesium (Cs) and francium (Fr) in general, and alkaline-earth metalsreferred to magnesium (Mg), calcium (Ca), strontium (Sr) and Barium(Ba).

[0044] Moreover, in the present specification, an organic compound layeris referred to a layer containing at least organic compound, it maycontain an inorganic material (silicon, silicon oxide or the like), andan organic compound layer contains a hole implantation layer, a holetransport layer, a luminescent layer, a blocking layer, an electrontransport layer and an electron implantation layer or the like.

[0045] It should be noted that luminescence obtained from a luminescenceof the present invention includes a luminescence by either of singletexcited state or triplet excited state, or both of these.

BRIEF DESCRIPTION OF THE DRAWINGS

[0046]FIGS. 1A to 1C are diagram showing embodiments of 1-3 of thepresent invention;

[0047]FIGS. 2A to 2E are diagram showing preparing processes of Example1 of the present invention;

[0048]FIGS. 3A to 3C are diagram showing preparing processes of Example1 of the present invention;

[0049]FIGS. 4A and 4B are sectional block diagram and top plan view ofan EL module of Example 2 of the present invention;

[0050]FIGS. 5A and 5B are diagram showing a configuration of a pixelsection of Example 3 of the present invention;

[0051]FIG. 6 is a diagram showing Example 4 of the present invention;and

[0052]FIGS. 7A to 7H are diagram showing one example of an electronicdevice.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1

[0053] As embodiment 1 of the present invention, a sectional structureof a pixel section of a luminescent device will be described below withreference to FIG. 1A.

[0054] In FIG. 1A, a semiconductor element is formed on a substrate 101.It should be noted that as the substrate 101, a glass substrate is usedas a substrate having an optical transparency, but quartz substrate maybe used. Moreover, as a semiconductor element, a TFT is used, an activelayer of each TFT has at least a channel formation region, a sourceregion, and a drain region. Moreover, an active layer of each TFT iscovered with a gate insulating film 104, and a gate electrodesuperimposing with the channel formation region via a gate insulatingfilm is formed. Moreover, an interlayer insulating film for covering agate electrode is provided, on the interlayer insulating film, anelectrode for electrically connecting to a source region or a drainregion of each TFT is provided. Moreover, an anode 122 for electricallyconnecting to an electrode reaching to the drain region of a TFT forcurrent control 202 which is a p-channel type TFT, is provided.Moreover, an insulating layer 123 having an opening portion so as tocover the edge of the anode 122 and have an edge in a taper shape isprovided. Moreover, an organic compound layer consisted of a holegeneration layer 124 and an organic layer 125 is provided on the anode122, a cathode 126 is provided on the organic compound layer, therebyforming a luminescent element. It should be noted that a luminescentelement is sealed by a cover member 128 while remaining a space 129 asit was.

[0055] In this embodiment, it is configured that an active layer of aTFT is covered by a gate insulating film 104, and further, it is coveredby an interlayer insulating film consisted of a protective film 115, anorganic resin film 116, and a film 117 for absorbing an impurity ion. Asa result of thus being configured, the diffusion of an impurity ion(representatively, alkaline metal ion and alkaline-earth metal ion) froma luminescent element can be sufficiently prevented.

[0056] Particularly, in the case where a material containing an alkalinemetal and an alkaline-earth metal is used as a material for a cathode,an anode, a buffer layer, or an organic compound layer, the presentinvention is very effective.

[0057] In the present embodiment, as for the film 117 for absorbing animpurity ion, a silicon nitride film containing a large amount offluorine, or an organic resin film containing a particle consisted of anantimony (Sb) compound for absorbing an alkaline metal ion, a tin (Sn)compound, or indium (In) compound or these laminated layer film may beused.

[0058] As the film 117 for absorbing an impurity ion, in the case wherea silicon nitride film containing a large amount of fluorine is used,when the fluorine concentration contained in the film of the siliconnitride film is made 1×10¹⁹/cm³ or more, preferably, the compositionratio of the fluorine in the silicon nitride film is made in the rangefrom 1 to 5%, the fluorine in the silicon nitride film is bonded to theimpurity ion being diffused, captures it in the film. Once the impurityion captured in the film, particularly, in the case of an alkaline metalion (for example, Li), its bonding force to fluorine is very strong,therefore, it is scarcely released. Moreover, similarly, analkaline-earth metal ion (for example, Mg) has a very strong bondingforce to fluorine.

[0059] Moreover, as the film 117 for absorbing an impurity ion, in thecase where a silicon nitride film containing fluorine at the compositionratio of 1 to 5%, a silicon oxynitride film (SiONF film) containingfluorine or a silicon oxide film (SiOF film) containing a large amountof fluorine is used, it can be made so that the degas from the organicresin film 116 does not exert a bad influence on the luminescentelement.

[0060] Moreover, as the film 117 for absorbing an impurity ion, anorganic resin film containing a particle consisted of an antimony (Sb)compound, a tin (Sn) compound, or an indium (In) compound is used, theparticle contained in the film absorbs the impurity ion, particularly,an alkaline metal ion and an alkaline-earth metal ion. It should benoted that this organic resin film is made by mixing the above-describedparticle with one species or a plurality of species selected from anacetylacetonatochelate compound, an organic silicon compound, a metalalkoxide, and polysilazane and dispersed in an organic solvent.Moreover, since an EL element is very weak in the moisture, it isnecessary to suppress the release of the moisture from the film 117 andthe organic resin film 116 for absorbing an impurity ion.

[0061] Moreover, as for an EL element, if the thickness of the film ofthe organic compound layer is not uniform, since the variation isgenerated in its luminescence, it is preferable that an interlayerinsulating film having a high flatness is used so that the filmthickness of the organic compound layer having a film thickness becomesas uniform as possible. It should be noted that in the presentembodiment, it is configured so that the flatness is enhanced using theorganic resin film 116 of which the film thickness is thicker than thatof the film 117 for absorbing an impurity ion. Moreover, if it has asufficient flatness, an inorganic insulating film may be used instead ofthe organic resin film 116.

[0062] Moreover, the protective film 115 is a silicon nitride film, asilicon oxynitride film, and has an effect of preventing an impurity ionfrom diffusing from the organic resin film 116. In addition to this, theprotective film 115 has also an effect of preventing an impurity ionfrom diffusing from the film 117 for absorbing an impurity ion and fromthe luminescent element. Moreover, the protective film 115 is providedfor the purpose of preventing a gate electrode from denaturing such asoxidization or the like at the time of heat activation. Moreover, as theprotective film 115, a silicon nitride film containing fluorine at thecomposition ratio of 1 to 5% is used, and absorbs an impurity ion, andfurther may prevent an impurity ion from diffusing.

[0063] It should be noted that a top gate type TFT has been exemplifiedand described herein, but not particularly limited to use of it. Insteadof the top gate type TFT, it is capable of being applied to a bottomgate type TFT, a forward stagger type TFT and other TFT structures.

[0064] Moreover, herein, since the light emitted from a luminescentelement has the emitting direction which transmits through the substrate101, it is preferable that all of the protective film 115, organic resinfilm 116, the film 117 for absorbing an impurity ion have a sufficientoptical transparency.

Embodiment 2

[0065] As embodiment 2 of the present invention, a sectional structureof a pixel section of a luminescent device will be described below withreference to FIG. 1B. It should be noted that since the components aresame with those of embodiment 1 except for the configuration of aninterlayer insulating film, the detailed description is omitted.

[0066] In the present embodiment, it is configured so that an activelayer of a TFT is covered with the gate insulating film 104, andfurther, a film 317 for absorbing an impurity ion. As a result of beingthus configured, the diffusion of an impurity ion (representatively,alkaline metal ion, and alkaline-earth metal ion) from the luminescentelement can be sufficiently prevented.

[0067] As the film 317 for absorbing an impurity ion, a film which has asufficient flatness and transparency, and of which the moisture releasefrom the film is scarcely performed is used.

[0068] In the present embodiment, as the film 317 for absorbing animpurity ion, a silicon nitride film containing a large amount offluorine, or an organic resin film containing a particle consisted of anantimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound,or these laminated film may be used.

Embodiment 3

[0069] As embodiment 3 of the present invention, a sectional structureof a pixel section of a luminescent device will be described below withreference to FIG. 1C. It should be noted that since the components aresame with those of embodiment 1 except for the configuration of aninterlayer insulating film, the detailed description is omitted.

[0070] In the present mode for carrying out, it is configured so that anactive layer of a TFT is covered with the gate insulating film 104, andfurther, a film 417 for absorbing an impurity ion and an interlayerinsulating film consisted of an insulating film 418. As a result ofbeing thus configured, the diffusion of an impurity ion(representatively, alkaline metal ion, and alkaline-earth metal ion)from the luminescent element can be sufficiently prevented.

[0071] In the present mode for carrying out, as the film 417 forabsorbing an impurity ion, a silicon nitride film containing a largeamount of fluorine, or an organic resin film containing a particleconsisted of an antimony (Sb) compound, a tin (Sn) compound, or anindium (In) compound, or these laminated film may be used.

[0072] As the film 417 for absorbing an impurity ion, a film which has asufficient flatness and optical transparency, and of which the moisturerelease from the film is scarcely performed is used.

[0073] Moreover, as for an insulating film 418, it is capable of beingmade so that the moisture and degas from the film 417 for absorbing animpurity does not exert a bad influence on a luminescent element.

[0074] The present invention comprising the above-describedconfiguration will be further described in detail below with Examplesindicated below.

EXAMPLES Example 1

[0075] In the present example, a method for preparing a pixel section ofa luminescent element will be described below with reference to FIG. 2and FIG. 3. Moreover, in the present Example, as a semiconductor, a casewhere a thin film transistor (TFT) is formed will be described below.

[0076] First, a crystalline silicon film is formed on a transparentsubstrate 101 in a film thickness of 50 nm. It should be noted that as amethod for forming a film of a crystalline silicon film, known meansmight be used. Subsequently, semiconductor layers 102 and 103(hereinafter, referred to as active layer) consisted of a crystallinesilicon film in an island shape are formed by patterning a crystallinesilicon film. Subsequently, the gate insulating film 104 consisted of asilicon oxide film is formed by covering the active layer 102 and 103.Subsequently, the gate electrode 105 and 106 are formed on the gateinsulating film 104. (FIG. 1A) As a material for forming the gateelectrodes 105, 106, an element selected from Ta, W, Ti, Mo, Al, and Cu,or an alloy material of which main components are the said elements or acompound material may be used. Here, for gate electrodes 105 and 106, atungsten film having a film thickness of 350 nm or a tungsten alloy filmis used. Moreover, the gate electrode may be a laminated structurehaving two layers or more, or it may be three layer structure by in turnlaminating a tungsten film having a film thickness of 50 nm, an alloyfilm of aluminum and silicon (Al—Si) having a film thickness of 500 nm.

[0077] Subsequently, as shown in FIG. 2B, by utilizing the gateelectrodes 105 and 106 as a mask, an element belonging to XIII group ofthe periodic table (representatively, boron) is added. As a method foradding, known means may be used. In this way, an impurity regionindicating p-type conductive type (hereinafter, referred to p-typeimpurity region) 107 to 111 is formed. Moreover, immediately below thegate electrodes 105 and 106, channel formation regions 112 to 114 arefractioned and fixed. It should be noted that the p-type impurityregions 107 to 111 are a source region or a drain region of the TFT.

[0078] Subsequently, the protective film (herein, silicon nitride film)115 is formed in a film thickness of 50 nm, then, the activation of theelement belonging to XIII group of the periodic table, which has added,is performed by performing the heat processing. This activation may beperformed by either of furnace annealing, laser annealing or a lumpannealing, or performed by combining these. In the present example, theheat processing at 500° C. for 4 hours is performed under the atmosphereof nitrogen.

[0079] When the activation is terminated, it is effective to performhydrogenation. As for hydrogenation processing, known hydrogen annealingtechnology or plasma hydrogenation technology may be used.

[0080] Subsequently, as shown in FIG. 2C, the first interlayerinsulating film 116 consisted of an organic resin film such aspolyimide, acryl, polyimideamide or the like is formed into a thicknessof 800 nm. These materials are coated with spinner, it is heated, burnedor polymerized and formed, thereby capable of being smoothing thesurface. Moreover, since an organic resin material is in general low indielectric constant, parasitic volume can be reduced. It should be notedthat as the first interlayer insulating film 116, an inorganicinsulating film might be used.

[0081] Subsequently, the second interlayer insulating film 117 is formedon the first interlayer insulating film 116. The second interlayerinsulating film 117 may be formed by an insulating film for absorbing animpurity ion, preferably absorbing a metal element, and furtherpreferably absorbing an alkaline metal or an alkaline-earth metal,representatively, a silicon nitride film containing fluorine at thecomposition ratio of 1 to 5%, an organic resin film containing aparticle consisted of an antimony compound (Sb₂O₅.nH₂O) or a laminatedlayer made by combining these. In the present Example, an organic resinfilm containing antimony pentaoxide (Sb₂O₅.nH₂O) of which the averageparticle diameter is 10 to 20 nm is used. After antimony pentaoxideparticle and polymethyl silceschioxane copolymer were dispersed in anorganic solvent of glycols, ethers, alcohols, ketones, and the coatingwas performed by spin coat or the like, the film is formed by hardening.As for hardening means, hardening may be performed by heating orirradiation of ultraviolet ray.

[0082] Moreover, in the case where as an insulating film for absorbingan alkaline metal or an alkaline-earth metal, a silicon nitride filmcontaining fluorine at the composition ratio of 1 to 5% is used, thedegas from the first interlayer insulating film 116 is made not to exerta bad influence on the luminescent element.

[0083] It is capable of being configured so that the diffusion of animpurity ion from a cathode containing an alkaline metal and analkaline-earth metal formed later does not exert a bad influence on theactive layer of TFT by employing an insulating film for absorbing analkaline metal or an alkaline-earth metal for the second interlayerinsulating film 117. Moreover, the diffusion of an impurity ion to theactive layer of TFT is contemplated by providing the first interlayerinsulating film 116 and enhancing the flatness, and by widening theinterval of distance between the insulating film for absorbing analkaline metal or an alkaline-earth metal and the active layer of TFT.

[0084] Subsequently, a resist mask of the desired pattern is formed, acontact hole reaching to the drain region of TFT is formed by performingan etching of the interlayer insulating film, and the wirings 118 to 121are formed. As a wiring material, Al and Ti as an electricallyconductive metal film are used, besides these, these alloy material areused, after it is formed into a film by a sputter method and vacuumvapor deposition method, it may be patterned into the desired shape.

[0085] In this stage, TFT is completed. On the pixel section of theluminescent device, the TFT for switching 201 and the TFT for currentcontrol 202 are formed, at the same time, the TFT for deleting (notshown) is also formed. It should be noted that the gate electrode of TFTfor deleting is formed by one portion of gate wirings different from thegate wirings for forming the gate electrode of the TFT 201 forswitching. It should be noted that in the present example, all of theseTFT are formed by p-channel type TFT. Moreover, although here not shown,the retention volume is also formed. The retention volume is formed bylower retention volume formed by the semiconductor layer formed at thesame time with activation layer of TFT and by the wirings for forminggate insulating films and gate electrodes, and upper retention volumeformed by the wirings for forming gate electrodes, the protective film,the first interlayer insulating film, the second interlayer insulatingfilm and the current supplying wirings. Moreover, the semiconductorlayer is electrically connected to the current supplying wires.

[0086] Subsequently, an electrically conductive film having an opticaltransparency which is to be the anode 122 of the luminescent element,that is, herein an ITO film is formed. Moreover, as for the anode 122, amaterial having a work function larger than that of the material forforming the cathode, and further, a material having a sheet resistancethan that of ITO film, concretely, a material such as platinum (Pt),Chromium (Cr), tungsten (W), or Nickel (Ni) can be used. It should benoted that the film thickness of this time is preferably made in therange from 0.1 to 1 μm. Moreover, these metal elements used for theanode is also absorbed by the second interlayer insulating film 117, andthe diffusion into TFT may be prevented.

[0087] Subsequently, as shown in FIG. 2D, the anode 122 is formed byetching an electrically conductive film.

[0088] Then, an organic resin film consisted of polyimide, acryl, andpolyimideamide is formed over the whole surface. As for these, a heathardening material which is hardened by heating, or a photosensitivematerial which is hardened by irradiating ultraviolet ray can beemployed. In the case where the heat hardening material is used, then,resist mask is formed, an insulating layer 123 having an opening portionis formed on the anode 122 by dry etching. In the case where aphotosensitive material is used, the insulating layer 123 having anopening portion is formed on the anode 122 by performing the exposureusing photomask, and by performing a developing processing. Any way, theinsulating layer 123 is formed so that the end portion of the anode 122is covered and it has the edge in a taper shape. The coating property ofthe organic compound layer formed later is capable of being improved byforming an edge in a taper shape.

[0089] Subsequently, the hole generation layer 124 is formed on theanode 122. It should be noted that in the present example, the holegeneration layer 124 is a film having transparency, formed by co-vapordepositing a low molecular material and electron receptor as an organicmaterial. It should be noted that as a low molecular material, such ascondensed ring hydrocarbon including anthracene, tetracene, pyrene andthe like, linear paraffin, oligothiophene based material andphthalocyanine based material can be used, as electron receptor, TCNQ(tetracyano-quinodimethan), FeCl₃, ZrCl₄, HfCl₄, NbCl₅, TaCl₅, MoCl₅,and WCl₆ can be utilized.

[0090] Moreover, when the hole generation layer 124 is formed, the ratioof the low molecular material to the electron receptor is preferably 1:1at the molar ratio.

[0091] It should be noted that the patterning could be performed to thehole generation layer 124 into a shape as shown in FIG. 2E by formingthe hole generation layer using a metal mask by a vapor depositionmethod. The hole generation layer 124 is formed as described above.

[0092] After the hole generation layer 124 has been formed, an organiclayer 125 laminated by combining a plurality of layers such as the holeimplantation layer, the hole transport layer, the hole inhibition layer,the electron transport layer, the electron implantation layer and thebuffer layer besides the luminescent layer is formed. Moreover, theorganic layer 125 is formed in a thickness of about 50 nm (FIG. 3A). Itshould be noted that in the present example, including the holegeneration layer 124 and the organic layer 125, it is referred to anorganic compound layer 130. It should be noted that as an organiccompound for forming the organic compound layer, the low molecule basedmaterial or the high molecule based material may be used, a single layerusing a known material or a laminated layer can be formed by combiningthese in multiple combination.

[0093] Next, the cathode 126 is formed by a vapor deposition method(FIG. 3B). As a material to be the anode 126, besides Al—Li alloy andMg—Ag alloy, a film formed using elements belonging to I group or IIgroup of the periodic table and aluminum by co-vapor deposition methodcan be used. It should be noted that the film thickness of the cathode126 is preferably in the range from 80 to 200 nm. Here, an electrodecontaining a large amount of an alkaline metal or an alkaline-earthmetal is formed, however, an alkaline metal or an alkaline-earth metalwhich promotes the deterioration of the TFT is absorbed by the secondinterlayer insulating film 117, and the invasion of these into the TFTcan be prevented.

[0094] By the processes described above, the luminescent element 127consisted of the anode 122, the organic compound layer 130 and thecathode 126 can be completed.

[0095] Furthermore, as shown in FIG. 3C, the luminescent element 127 issealed with the cover member 128 or the like, entered into the space 129and sealed. As a result of this, the luminescent element 127 can becompletely shut out, and the invasion of the substances which promotesthe deterioration of the organic compound layer such as moisture andoxygen from the exterior can be prevented.

[0096] It should be noted that as a material configuring the covermember 128, besides glass substrate, quartz substrate, a plasticsubstrate consisted of FRP (Fiberglass-Reinforced Plastics), PVF(polyvinylfluoride), Mylar, polyester or acryl and the like can be used.

[0097] Moreover, the present example corresponds to embodiment 1, andthe same reference numerals are used and attached at the same locations.

Example 2

[0098] Referring to FIG. 4, the external appearance of a light emittingdevice of the present invention will be described in the presentinvention.

[0099]FIG. 4A is a top view of the light emitting device, and FIG. 4B isa sectional view taken on line A-A′ of FIG. 4A. Reference number 701represents a source signal line driving circuit, which is shown by adotted line; 702, a pixel section; 703, a gate signal line drivingcircuit; 710, a substrate; 704, a cover material; and 705, a sealant. Aspace 707 is surrounded by the substrate 710, the cover material 704,and the sealant 705.

[0100] Reference number 708 represents an interconnection fortransmitting signals inputted to the source signal line driving circuit701 and the gate signal line driving circuit 703. The interconnection708 receives video signals or clock signals from a flexible printcircuit (FPC) 709, which will be an external input terminal. Only theFPC is illustrated, but a printed wiring board (PWB) may be attached tothis FPC. The light emitting device referred to in the presentspecification may be the body of the light emitting device, or a productwherein an FPC or a PWB is attached to the body.

[0101] The following will describe a sectional structure, referring toFIG. 4B. The driving circuits and the pixel section are formed on thesubstrate 710, but the source signal line driving circuit 701 as one ofthe driving circuits and the pixel section 702 are shown in FIG. 4B.

[0102] In the source signal line driving circuit 701, a CMOS circuitwherein an n-channel type TFT 713 and a p-channel type TFT 714 arecombined is formed. The TFTs constituting the driving circuit may becomposed of known CMOS circuits, PMOS circuits or NMOS circuits. In thepresent example, a driver-integrated type, wherein the driving circuitis formed on the substrate, is illustrated, but the driver-integratedtype may not necessarily be adopted. The driver may be fitted not to thesubstrate but to the outside.

[0103] The pixel section 702 is composed of plural pixels including acurrent-controlling TFT 711 and an anode 712 electrically connected tothe drain of the TFT 711.

[0104] In the anode 712, slits are made. On the both sides of the anode712, insulators 715 are formed, and an organic compound layer 717composed of a hole injection layer 716, a hole generating layer, a holetransport layer, a light emitting layer and an electron transport layeris formed. Furthermore, a cathode 718 is formed on the insulators 715and the organic compound layer 717. In this way, a light emittingelement 719 composed of the anode, the organic compound layer and thecathode is formed.

[0105] The cathode 718 also functions as an interconnection common toall of the pixels, and is electrically connected through theinterconnection 708 to the FPC 709.

[0106] In order to confine the light emitting element 719 formed on thesubstrate 710 airtightly, the cover material 704 is adhered to thesubstrate 710 with the sealant 705. A spacer made of a resin film may beset up to keep a given interval between the cover material 704 and thelight emitting element 719. An inert gas such as nitrogen is filled intothe space 707 inside the sealant 705. As the sealant 705, an epoxy resinis preferably used. The sealant 705 is desirably made of a materialthrough which water content or oxygen is transmitted as slightly aspossible. Furthermore, it is allowable to incorporate a material havingmoisture absorption effect or a material having antioxidation effectinto the space 707.

[0107] In the present example, as the material making the cover material704, there may be used a glass substrate, a quartz substrate, or aplastic substrate made of fiber glass-reinforced plastic (FRP),polyvinyl fluoride (PVF), mylar, polyester or polyacrylic resin.

[0108] After the adhesion of the cover material 704 to the substrate 710with the sealant 705, a sealant is applied so as to cover the side faces(exposure faces).

[0109] As described above, the light emitting element is airtightly putinto the space 707, so that the light emitting element can be completelyshut out from the outside and materials promoting deterioration of theorganic compound layer, such as water content and oxygen, can beprevented from invading this layer from the outside. Consequently, thelight emitting device can be made highly reliable.

[0110] When any one of the structures of Embodiment modes 1 to 3, andExample 1 is airtightly confined inside a space to manufacture a lightemitting device, the structure of the present invention may be freelycombined with the structure.

Example 3

[0111] A light emitting device of the present invention can be made upto a pixel section illustrated in FIG. 5A. The circuit configuration ofthe device illustrated in FIG. 5A is illustrated in FIG. 5B.

[0112] In FIG. 5A, reference number 801 represents a switching TFT,which is an n-channel type TFT. An interconnection 802 is a gateinterconnection for connecting gate electrodes 804 (804 a and 804 b) ofthe switching TFT 801 electrically.

[0113] In the present example, a double-gate structure, wherein twochannel-formed areas are laid out, is adopted. However, a single-gatestructure, wherein a single channel-formed area is formed, or atriple-gate structure, wherein three channel-formed areas are formed,may be adopted.

[0114] The source of the switching TFT 801 is connected to a sourceinterconnection 805, and the drain thereof is connected to a draininterconnection 806. The drain interconnection 806 is electricallyconnected to a gate electrode 808 of the current-controlling TFT 807.The current-controlling TFT 807 is made up of a p-channel type TFT. Inthe present example, a single-gate structure is adopted. However, adouble-gate structure or a triple-gate structure may be adopted.

[0115] In the present example, the switching TFT 801 is made up of ann-channel type TFT, and the current-controlling TFT 807 is made up of ap-channel type TFT. However, the switching TFT 801 may be made up of ap-channel type TFT, and the current-controlling TFT 807 may be made upof an n-channel type TFT. Both of them may be made up of n-channel typeTFTs or p-channel type TFTs.

[0116] The source of the current-controlling TFT 807 is electricallyconnected to a current-supplying line 809, and the drain thereof iselectrically connected to a drain interconnection 810. The draininterconnection 810 is electrically connected to an electrode (anode)811 shown by a dotted line. By forming an organic compound layer and anelectrode (cathode) on the electrode (anode) 811, a light emittingelement 815 illustrated in FIG. 5B can be formed.

[0117] In a region 812, a retention capacitor (condenser) is formed. Thecondenser 812 is composed of a semiconductor film 813 electricallyconnected to the current-supplying line 809, an insulating film (notillustrated) as the same layer which constitutes the gate insulatingfilm, and a capacitor electrode 814 electrically connected to the gateelectrode 808. A capacitor composed of the capacitor electrode 814, thesame layer (not illustrated) that constitutes an interlayer dielectric,and the current-supplying line 809 may be used as a retention capacitor.

[0118] The structure of the pixel section described in the presentexample may be combined instead of the pixel section described inExample 1.

[0119] Further, in the present example, the pixel section and TFT(n-channel type TFT and p-channel type TFT) of the driver circuitprovided in the periphery of the pixel section are formed simultaneouslyon the same substrate. In addition, the light emitting element connectedelectrically to the TFT is formed in the pixel section so as to form anelement substrate.

Example 4

[0120] An example of light from a light emitting element being emittedin a downward direction through a substrate is shown in Example 1. Inthe present example, however, an example of light emitted from a lightemitting element in an upward direction is shown in FIGS. 6A and 6B.

[0121] Note that although a glass substrate is used as a substrate 600in the present example, quartz substrates, silicon substrates, metallicsubstrates, and ceramic substrates may also be used.

[0122] Active layers of each TFT are prepared with at least a channelforming region, a source region, and a drain region in FIG. 6A. Further,the active layers of each TFT are covered by a gate insulating film, anda gate electrode is formed so as to overlap with the channel formingregion through the gate insulating film. An interlayer insulating filmis formed covering the gate electrode, and electrodes that areelectrically connected to the source region or the drain region of eachof the TFTs are formed on the interlayer insulating film. A cathode 622that is electrically connected to a current control TFT 602, ann-channel TFT, is then formed. Further, an insulating layer 623 havingan opening portion is formed covering an edge portion of the cathode 622and having a tapered shape border. An organic compound layer composed ofan organic layer 624 and a hole injecting layer 625 is formed on thecathode 622, and an anode 626 is formed on the organic compound layer,thus forming a light emitting element. Note that the light emittingelement is sealed by a covering material while maintaining a space.

[0123] In the present example, an active layer of TFT is overlapped withthe gate insulating film, the protective film, the organic resin film,and the interlayer insulating film formed out of film 617 absorbingimpurity ion, sequentially. According to this structure, a diffusion ofimpurity ion (typically, alkaline metal ion) from the light emittingelement can be prevented enough.

[0124] It is preferable to form the cathode using Al or an Al—Lialuminum alloy, which have small work functions. A transparentconductive film is used in the anode, and it is possible to usematerials such as a compound of indium oxide and tin oxide (referred toas ITO), a compound of indium oxide and zinc oxide, tin oxide, and zincoxide for the transparent conductive film.

[0125] In the present example, nonconductive compounds include thealkali metal or the alkali earth metal (referred to as the alkalicompound hereinafter) can be formed on all cathodes before the organiccompound layer is formed. As for the alkali compound, lithium fluoride(LiF), lithium oxide (Li₂O), barium fluoride (BaF₂), barium oxide (BaO),calcium fluoride (CaF₂), calcium oxide (CaO), strontium oxide (SrO) orcesium oxide (Cs₂O) can be used.

[0126] Especially, the structure of the present example is effective inthe case that the materials such as the alkali metal or alkali earthmetal to the cathode, the anode, the buffer layer, or the organiccompound layer.

[0127] In the present example, film 617, which absorbs an impurity ion,may use the organic resin film which contains the corpuscle made ofnitride silicon film including a great quantity of fluoride, antimony(Sb) compound, tin (Sn) compound, or indium (In) compound or laminationfilm of these.

[0128] The light emitting device may have a light emitting element, inwhich light generated from the organic compound layer radiate to theoutside to the direction of the arrow shown in FIG. 6 by the presentexample.

[0129] Further, in the present example, the pixel section and TFT(n-channel type TFT and p-channel type TFT) of the driver circuitprovided in the periphery of the pixel section are formed simultaneouslyon the same substrate. In addition, the light emitting element connectedelectrically to the TFT is formed in the pixel section so as to form anelement substrate.

Example 5

[0130] A light emitting device using a light emitting element isself-luminous and therefore is superior in visibility in brightsurroundings compared to liquid crystal display devices and has widerviewing angle. Accordingly, it can be used for display portions ofvarious electric equipments.

[0131] Given as examples of electric equipment employing a lightemitting device formed by the present invention is applied are: a videocamera; a digital camera; a goggle type display (head mounted display);a navigation system; an audio reproducing device (car audio, an audiocomponent, and the like); a laptop computer; a game machine; a portableinformation terminal (a mobile computer, a cellular phone, a portablegame machine, an electronic book, etc.); and an image reproducing device(specifically, a device equipped with a display device which canreproduce a recording medium such as a digital versatile disk (DVD), andcan display the image). The light emitting device having a lightemitting element is desirable particularly for a portable informationterminal since its screen is often viewed obliquely and is required tohave a wide viewing angle. Specific examples of the electric equipmentare shown in FIGS. 7A to 7H.

[0132]FIG. 7A shows a display device, which comprises a casing 2001, asupporting base 2002, a display portion 2003, speaker portions 2004, avideo input terminal 2005, etc. The light emitting device formed by thepresent invention is applied can be used for the display portion 2003.The light emitting device having a light emitting element isself-luminous and does not need a backlight, so that it can make athinner display portion than liquid display devices can. The termdisplay device includes every display device for displaying informationsuch as one for a personal computer, one for receiving TV broadcasting,and one for advertisement. In addition, the display shown in FIG. 7A issmall-medium type or large type, for example, screen of the displaysized 5 to 20 inches. Moreover, it is preferable to mass-produce byexecuting a multiple pattern using a substrate sized 1×1 m to form suchsized display section.

[0133]FIG. 7B shows a digital still camera, which comprises a main body2101, a display portion 2102, an image receiving portion 2103, operationkeys 2104, an external connection port 2105, a shutter 2106, etc. Thelight emitting device formed by the present invention is applied can beused for the display portion 2102.

[0134]FIG. 7C shows a laptop computer, which comprises a main body 2201,a casing 2202, a display portion 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206, etc. The light emittingdevice formed by the present invention is applied can be used for thedisplay portion 2203.

[0135]FIG. 7D shows a mobile computer, which comprises a main body 2301,a display portion 2302, a switch 2303, operation keys 2304, an infraredray port 2305, etc. The light emitting device formed by the presentinvention is applied can be used for the display portion 2302.

[0136]FIG. 7E shows a portable image reproducing device equipped with arecording medium (a DVD player, to be specific). The device comprises amain body 2401, a casing 2402, a display portion A 2403, a displayportion B 2404, a recording medium (DVD) reading portion 2405, operationkeys 2406, speaker portions 2407, etc. The display portion A 2403 mainlydisplays image information whereas the display portion B 2404 mainlydisplays text information. The light emitting device formed by thepresent invention is applied can be used for the display portions A 2403and B 2404. The term image reproducing device equipped with a recordingmedium includes video game machines.

[0137]FIG. 7F shows a goggle type display (head mounted display), whichcomprises a main body 2501, display portions 2502, and arm portions2503. The light emitting device formed by the present invention isapplied can be used for the display portions 2502.

[0138]FIG. 7G shows a video camera, which comprises a main body 2601, adisplay portion 2602, a casing 2603, an external connection port 2604, aremote control receiving portion 2605, an image receiving portion 2606,a battery 2607, an audio input portion 2608, operation keys 2609, etc.The light emitting device formed by the present invention is applied canbe used for the display portion 2602.

[0139]FIG. 7H shows a cellular phone, which comprises a main body 2701,a casing 2702, a display portion 2703, an audio input portion 2704, anaudio output portion 2705, operation keys 2706, an external connectionport 2707, an antenna 2708, etc. The light emitting device formed by thepresent invention is applied can be used for the display portion 2703.If the display portion 2703 displays white characters on a blackbackground, power consumption of the cellular phone can be reduced.

[0140] If the luminance of light emitted from organic materials isincreased in future, the light emitting device having a light emittingelement can be used also in a front or rear projector in which lightbearing outputted image information is magnified by a lens or the liketo be projected on a screen.

[0141] The electric equipment given in the above often displaysinformation distributed through electronic communication lines such asInternet and CATV (cable television), especially, animation informationwith increasing frequency. The light emitting device having a lightemitting element is suitable for displaying animation information sinceorganic materials have fast response speed.

[0142] In the light emitting device, portions that emit light consumepower. Therefore, it is desirable to display information such that assmall portions as possible emits light. Accordingly, if the lightemitting device is used for a display portion that mainly displays textinformation such as a portable information terminal, in particular, acellular phone, and an audio reproducing device, it is desirable toassign light emitting portions to display text information whileportions that do not emit light serve as the background.

[0143] As described above, the application range of the light emittingdevice to which the present invention is applied is very wide andelectric equipment of every field can employ the device. The electricequipments in this example may use the light emitting device formed inExamples 1 to 4 to the display portion thereof.

[0144] Conventionally, an insulating film provided between a TFT and anEL element had a performance only for blocking an impurity ion ofcomparatively low level, but by making it a configuration of theabove-described present invention, the diffusion of an impurity ion(representatively, alkaline metal ion and alkaline-earth metal ion) fromthe EL element can be sufficiently prevented.

[0145] Accordingly, a luminescent element having a higher reliabilitycomparing to the conventional element can be formed. Moreover, anelectric appliance having a high performance can be obtained using aluminescent device having such a luminescent element as a displaysection.

What is claimed is:
 1. A luminescent device comprising: a thin filmtransistor provided over an insulating surface of a substrate; aluminescent element electrically connected with said thin filmtransistor, said luminescent element comprising an organic compoundlayer, an anode and a cathode, said cathode containing an alkalinemetal; at least one insulating layer provided between said thin filmtransistor and said luminescent element and selected from the groupconsisting of an insulating layer adsorbing said alkaline metal and aninsulating layer preventing diffusion of said alkaline metal.
 2. Adevice according to claim 1, wherein said at least one insulating layercomprises a silicon nitride film containing fluorine at a concentrationof 1×10¹⁹/cm³ or more.
 3. A device according to claim 1, wherein said atleast one insulating layer comprises an organic resin film containing aparticle comprising an antimony (Sb) compound, a tin (Sn) compound, orindium (In) compound.
 4. A device according to claim 1, said at leastone insulating layer comprises a laminated layer of a silicon nitridefilm containing fluorine at a concentration of 1×10 ¹⁹/cm³ or more andan organic resin film containing a particle comprising an antimony (Sb)compound, a tin (Sn) compound, or indium (In) compound.
 5. A deviceaccording to claim 1, said insulating layer comprises a siliconoxynitride film or a silicon oxide film containing fluorine at aconcentration of 1×10¹⁹/cm³ or more.
 6. A luminescent device comprising:a thin film transistor provided over an insulating surface of asubstrate; a luminescent element electrically connected with said thinfilm transistor, said luminescent element comprising an organic compoundlayer, an anode and a cathode, said organic compound layer containing analkaline metal; at least one insulating layer provided between said thinfilm transistor and said luminescent element and selected from the groupconsisting of an insulating layer adsorbing said alkaline metal and aninsulating layer preventing diffusion of said alkaline metal.
 7. Adevice according to claim 6, wherein said at least one insulating layercomprises a silicon nitride film containing fluorine at a concentrationof 1×10¹⁹/cm³ or more.
 8. A device according to claim 6, wherein said atleast one insulating layer comprises an organic resin film containing aparticle comprising an antimony (Sb) compound, a tin (Sn) compound, orindium (In) compound.
 9. A device according to claim 6, said at leastone insulating layer comprises a laminated layer of a silicon nitridefilm containing fluorine at a concentration of 1×10¹⁹/cm³or more and anorganic resin film containing a particle comprising an antimony (Sb)compound, a tin (Sn) compound, or indium (In) compound.
 10. A deviceaccording to claim 6, said insulating layer comprises a siliconoxynitride film or a silicon oxide film containing fluorine at aconcentration of 1×10¹⁹/cm³ or more.
 11. A luminescent devicecomprising: a thin film transistor provided over an insulating surfaceof a substrate; a luminescent element electrically connected with saidthin film transistor, said luminescent element comprising an organiccompound layer, an anode, a buffer layer and a cathode, said bufferlayer containing an alkaline metal; at least one insulating layerprovided between said thin film transistor and said luminescent elementand selected from the group consisting of an insulating layer adsorbingsaid alkaline metal and an insulating layer preventing diffusion of saidalkaline metal.
 12. A device according to claim 11, wherein said atleast one insulating layer comprises a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more.
 13. A deviceaccording to claim 11, wherein said at least one insulating layercomprises an organic resin film containing a particle comprising anantimony (Sb) compound, a tin (Sn) compound, or indium (In) compound.14. A device according to claim 11, said at least one insulating layercomprises a laminated layer of a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more and an organic resinfilm containing a particle comprising an antimony (Sb) compound, a tin(Sn) compound, or indium (In) compound.
 15. A device according to claim11, said insulating layer comprises a silicon oxynitride film or asilicon oxide film containing fluorine at a concentration of 1×10¹⁹/cm³or more.
 16. A luminescent device comprising: a thin film transistorprovided over an insulating surface of a substrate; a luminescentelement electrically connected with said thin film transistor, saidluminescent element comprising an organic compound layer, an anode and acathode, said cathode containing an alkaline-earth metal; at least oneinsulating layer provided between said thin film transistor and saidluminescent element and selected from the group consisting of aninsulating layer adsorbing said alkaline metal and an insulating layerpreventing diffusion of said alkaline metal.
 17. A device according toclaim 16, wherein said at least one insulating layer comprises a siliconnitride film containing fluorine at a concentration of 1×10¹⁹/cm³ ormore.
 18. A device according to claim 16, wherein said at least oneinsulating layer comprises an organic resin film containing a particlecomprising an antimony (Sb) compound, a tin (Sn) compound, or indium(In) compound.
 19. A device according to claim 16, said at least oneinsulating layer comprises a laminated layer of a silicon nitride filmcontaining fluorine at a concentration of 1×10¹⁹/cm³ or more and anorganic resin film containing a particle comprising an antimony (Sb)compound, a tin (Sn) compound, or indium (In) compound.
 20. A deviceaccording to claim 16, said insulating layer comprises a siliconoxynitride film or a silicon oxide film containing fluorine at aconcentration of 1×10¹⁹/cm³ or more.
 21. A luminescent devicecomprising: a thin film transistor provided over an insulating surfaceof a substrate; a luminescent element electrically connected with saidthin film transistor, said luminescent element comprising an organiccompound layer, an anode and a cathode, said organic compound layercontaining an alkaline metal; at least one insulating layer providedbetween said thin film transistor and said luminescent element andselected from the group consisting of an insulating layer adsorbing saidalkaline metal and an insulating layer preventing diffusion of saidalkaline metal.
 22. A device according to claim 21, wherein said atleast one insulating layer comprises a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more.
 23. A deviceaccording to claim 21, wherein said at least one insulating layercomprises an organic resin film containing a particle comprising anantimony (Sb) compound, a tin (Sn) compound, or indium (In) compound.24. A device according to claim 21, said at least one insulating layercomprises a laminated layer of a silicon nitride film containingfluorine at a concentration of 1×10¹⁹/cm³ or more and an organic resinfilm containing a particle comprising an antimony (Sb) compound, a tin(Sn) compound, or indium (In) compound.
 25. A device according to claim21, said insulating layer comprises a silicon oxynitride film or asilicon oxide film containing fluorine at a concentration of 1×10¹⁹/cm³or more.
 26. A luminescent device comprising: a thin film transistorprovided over an insulating surface of a substrate; a luminescentelement electrically connected with said thin film transistor, saidluminescent element comprising an organic compound layer, an anode, abuffer layer and a cathode, said buffer layer containing an alkalinemetal; at least one insulating layer provided between said thin filmtransistor and said luminescent element and selected from the groupconsisting of an insulating layer adsorbing said alkaline metal and aninsulating layer preventing diffusion of said alkaline metal.
 27. Adevice according to claim 26, wherein said at least one insulating layercomprises a silicon nitride film containing fluorine at a concentrationof 1×10¹⁹/cm³ or more.
 28. A device according to claim 26, wherein saidat least one insulating layer comprises an organic resin film containinga particle comprising an antimony (Sb) compound, a tin (Sn) compound, orindium (In) compound.
 29. A device according to claim 26, said at leastone insulating layer comprises a laminated layer of a silicon nitridefilm containing fluorine at a concentration of 1×10¹⁹/cm³ or more and anorganic resin film containing a particle comprising an antimony (Sb)compound, a tin (Sn) compound, or indium (In) compound.
 30. A deviceaccording to claim 26, said insulating layer comprises a siliconoxynitride film or a silicon oxide film containing fluorine at aconcentration of 1×10¹⁹/cm³ or more.